Image any of your samples effortlessly at sub-nanometer resolution and high detection efficiency. Rely on surface sensitive analysis. Capitalize on variable pressure. Profit from the highest sample flexibility.
|Essential Specifications|| |
ZEISS GeminiSEM 500
ZEISS GeminiSEM 450
ZEISS GeminiSEM 300
|Thermal field emission type, stability better than 0.2 %/h|
|Acceleration Voltage||0.02 – 30 kV|
|Probe Current||3 pA – 20 nA||3 pA – 40 nA||3 pA – 20 nA|
|(100 nA configuration also available)||(100 nA or 300 nA configuration|
|(100 nA configuration also available)|
Up to 32k × 24k pixels
50 – 2,000,000
12 – 2,000,000
12 – 2,000,000
|Detectors available in basic configuration|
Inlens Secondary Electron detector
|Everhart Thornley Secondary Electron|
|High efficiency VPSE detector|
(included in variable pressure option)
|Selected Options||Inlens Energy selected Backscatter|
|Angular selective backscattered detector||Angular selective backscattered detector|
|Annular STEM detector (aSTEM 4)|
|EDS Detector (energy dispersive|
|EBSD Detector (electron backscatter|
diffraction) Investigation of crystalline orientation
|Local Charge Compensation|
|Additional stage options available|
The Technology Behind
Gemini Electron Optics
Field emission SEMs are designed for high resolution imaging. Key to the performance of a field emission SEM is its electron optical column. Gemini is tailored for excellent resolution on any sample, especially at low accelerating voltages, for complete and efficient detection, and ease-of-use.
Gemini optics is characterized by three main components:
- The Gemini objective lens design combines electrostatic and magnetic fields to maximize optical performance while reducing field influences at the sample to a minimum. This enables excellent imaging, even on challenging samples such as magnetic materials.
- Gemini beam booster technology, an integrated beam deceleration, guarantees small probe sizes and high signal-to-noise ratios.
- The Gemini Inlens detection concept ensures efficient signal detection by detecting secondary (SE) and backscattered (BSE) electrons in parallel minimizing time-to-image.
For your applications benefit from:
- Long-term stability of the SEM alignment and the effortless way it adjusts all system parameters such as probe current and acceleration voltage.
- Achieve distortion-free, high resolution imaging with the help of the near magnetic-field free optics.
- Get information solely from the top-most layer of your samples with the Inlens SE detector that produces images out of the truly surface sensitive SE 1 electrons true.
- Obtain true material contrast at very low voltages with the detection concept of the Inlens EsB detector.
Gemini 1 and its Novelties
- Reduce charging on non-conductive samples.
- NanoVP technology reduces beam broadening and thus enables both imaging of high resolution details and true in-lens detection up to 150 Pa.
- Hence, Inlens SE and EsB detectors can be used, even simultaneously, in VP mode for high resolution surface and materials contrast imaging.
- Pressure can even be elevated up to 500 Pa using chamber VPSE detection for your most challenging samples.