Image any of your samples effortlessly at sub-nanometer resolution and high detection efficiency. Rely on surface sensitive analysis. Capitalize on variable pressure. Profit from the highest sample flexibility.
More Signal and More Detail
- Acquire crisp images fast and with minimum sample damage thanks to significantly increased Inlens detection signal.
- Resolve nanoscale details with high resolution and contrast at low voltages and profit from perfect image quality, without requiring sample bias.
- At 500 V you can resolve 1.0 nm with perfect image quality, without requiring beam deceleration.
- Apply beam deceleration, Tandem decel, and achieve even up to 0.8 nm at 1 kV.
- The new variable pressure mode, NanoVP, makes you feel like you’re working in high vacuum.
Speed and Surface Sensitivity for Both Imaging and Analytics
- Take advantage of high resolution and surface sensitivity for your EDS or EBSD analysis, especially when working with low voltages.
- Image large areas of your sample fast and with excellent quality
- Profit from the optical design: you do not lose time in complicated realignments as you work.
- Investigate non-conductive, or magnetic or any kind of sample: Work in high vacuum or variable pressure – no need for compromise either, whether on the speed or the quality of your images and analyses.
- Image large fields of view with excellent image quality and fast-time-to-image.
- Count on efficient detection, excellent resolution and distortion-free, large area images.
- Profit from the novel optical design’s high gun resolution mode that is tailored to low voltage imaging even for challenging samples, such as beam-sensitive or magnetic materials.
- Characterize your sample comprehensively: obtain unique low voltage, material contrast with the energy selective backscatter detector.
- Utilize the NanoVP mode: Image non-conductive specimens at high resolution with excellent surface sensitivity with the Inlens SE detector at higher pressures.
|Essential Specifications|| |
ZEISS GeminiSEM 500
ZEISS GeminiSEM 450
ZEISS GeminiSEM 300
|Thermal field emission type, stability better than 0.2 %/h|
|Acceleration Voltage||0.02 – 30 kV|
|Probe Current||3 pA – 20 nA||3 pA – 40 nA||3 pA – 20 nA|
|(100 nA configuration also available)||(100 nA or 300 nA configuration|
|(100 nA configuration also available)|
Up to 32k × 24k pixels
50 – 2,000,000
12 – 2,000,000
12 – 2,000,000
|Detectors available in basic configuration|
Inlens Secondary Electron detector
|Everhart Thornley Secondary Electron|
|High efficiency VPSE detector|
(included in variable pressure option)
|Selected Options||Inlens Energy selected Backscatter|
|Angular selective backscattered detector||Angular selective backscattered detector|
|Annular STEM detector (aSTEM 4)|
|EDS Detector (energy dispersive|
|EBSD Detector (electron backscatter|
diffraction) Investigation of crystalline orientation
|Local Charge Compensation|
|Additional stage options available|
The Technology Behind
Gemini Electron Optics
Gemini 1 – What You Always Wanted to Know about the Basics
Field emission SEMs are designed for high resolution imaging. Key to the performance of a field emission SEM is its electron optical column. Gemini is tailored for excellent resolution on any sample, especially at low accelerating voltages, for complete and efficient detection, and ease-of-use.
Gemini optics is characterized by three main components:
- The Gemini objective lens design combines electrostatic and magnetic fields to maximize optical performance while reducing field influences at the sample to a minimum. This enables excellent imaging, even on challenging samples such as magnetic materials.
- Gemini beam booster technology, an integrated beam deceleration, guarantees small probe sizes and high signal-to-noise ratios.
- The Gemini Inlens detection concept ensures efficient signal detection by detecting secondary (SE) and backscattered (BSE) electrons in parallel minimizing time-to-image.
For your applications benefit from:
- Long-term stability of the SEM alignment and the effortless way it adjusts all system parameters such as probe current and acceleration voltage.
- Achieve distortion-free, high resolution imaging with the help of the near magnetic-field free optics.
- Get information solely from the top-most layer of your samples with the Inlens SE detector that produces images out of the truly surface sensitive SE 1 electrons true.
- Obtain true material contrast at very low voltages with the detection concept of the Inlens EsB detector.
Gemini 1 and its Novelties
Gemini 1 Novelties – the Development Goes on
- Beam sensitive samples
- Non-conductive materials
- Gaining true sample surface information without undesirable background signal from deeper sample layers
The novel Gemini optics are optimized for resolutions at low and very low voltages and for contrast enhancement. Technological characteristics are the high gun resolution mode, GeminiSEM 500’s Nano-twin lens and the optional Tandem decel.
- Minimized chromatic aberration thanks to of a reduction of primary energy width by 30%
- Allows even smaller probe sizes
- Better resolution at low and ultra-low voltages by optimizing the geometry and the electrostatic and magnetic field distributions.
- An enhanced Inlens detector signal under low voltage imaging conditions.
Tandem decel lets you maximize high resolution imaging on suitable samples:
- Tandem decel, a two-step deceleration mode, combines the beam booster technology with a high negative bias voltage that is applied to the sample: the electrons of the primary electron beam are decelerated, thus the landing energy is effectively reduced.
- Use this to further improve resolution below 1 kV and boost the detection efficiency of backscattered diode detectors.
- Tandem decel optional sample biasing up to 5 kV further improves the excellent imaging capabilities at low voltages.
Capitalize on Gemini 2 Optics
- GeminiSEM 450 comes with Gemini 2 optics featuring a double condenser
- Adjust the beam current continuously while the spot size stays optimized simultaneously
- Switch seamlessly between high resolution imaging – at low beam currents – and analytical modes – at high beam currents
- You save time and effort because there’s no need to realign the beam after changing imaging parameters
- Stay flexible: use the highest beam current density for high resolution imaging and analysis at both low and high beam current, independently of which beam energy you select
- Your specimen won’t exposed to a magnetic field: achieve a distortion-free EBSD patterns and high resolution imaging over a large field of view
- Tilt the specimen without influencing the electron optical performance. Image even magnetic samples easily
- Choose a charge reduction mode that suits your sample best: local charge compensation, variable pressure in the chamber or NanoVP
NanoVP – Get More Detail and Stay Flexible in Variable Pressure Mode
- Reduce charging on non-conductive samples.
- NanoVP technology reduces beam broadening and thus enables both imaging of high resolution details and true in-lens detection up to 150 Pa.
- Hence, Inlens SE and EsB detectors can be used, even simultaneously, in VP mode for high resolution surface and materials contrast imaging.
- Pressure can even be elevated up to 500 Pa using chamber VPSE detection for your most challenging samples.
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